Ultraband GaN Power HEMTs: 650 V and 1200 V D-Mode GaN-on-SiC

Emerges is an authorised Ultraband Technologies distributor in Singapore, supplying Ultraband's GaN-on-SiC power HEMTs for high-voltage power conversion. The range includes the 650 V UPDC4G48A8 and the 1200 V UPDC5G78B1, depletion-mode devices with low on-resistance and low switching loss for power systems, renewables, EV charging, industrial control and aerospace.
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Ultraband GaN power HEMT devices

Authorised Ultraband Technologies Distributor

Ultraband's power devices are built on GaN-on-SiC in depletion-mode (D-mode) and cascode structures spanning 650 to 1200 V, targeting high efficiency, low switching loss and long-term reliability. Ultraband cites breakdown above 1200 V and on-resistance of 30 to 150 mOhm for the platform, with 1700 V targets for EV chargers.

Both released HEMTs carry a 20 A maximum drain current and are supplied as bare die for standard die-attach, so they can be integrated into power modules alongside drivers and cascode MOSFETs.

Emerges supplies the full Ultraband range, so power and RF teams can source GaN devices from one authorised distributor.

Ultraband GaN power HEMT devices

UPDC4G48A8: 650 V depletion-mode GaN-on-SiC HEMT with 80 mOhm RON and 20 A ID max, bare die.

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Ultraband GaN power HEMT devices

UPDC5G78B1: 1200 V depletion-mode GaN-on-SiC HEMT with 120 mOhm RON and 20 A ID max, bare die.

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Ultraband GaN Power HEMT Range

D-Mode GaN HEMTs

650 V D-mode GaN HEMT

UPDC4G48A8

Available

650 V depletion-mode GaN-on-SiC HEMT with 80 mOhm RON and 20 A ID max, bare die.

  • Process: GaN-on-SiC, depletion mode
  • Breakdown voltage (VBD): 650 V
  • On-resistance (RON): 80 mOhm
  • Package: Bare die
Applications: Power systems, Renewable energy, EV charging and on-board chargers, Industrial control, Aerospace and defence.
View UPDC4G48A8 detailsRequest datasheet
1200 V D-mode GaN HEMT

UPDC5G78B1

Available

1200 V depletion-mode GaN-on-SiC HEMT with 120 mOhm RON and 20 A ID max, bare die.

  • Process: GaN-on-SiC, depletion mode
  • Breakdown voltage (VBD): 1200 V
  • On-resistance (RON): 120 mOhm
  • Package: Bare die
Applications: Power systems, Renewable energy, EV charging and on-board chargers, Industrial control, Aerospace and defence.
View UPDC5G78B1 detailsRequest datasheet

Ultraband GaN Power HEMT Specifications Comparison

Part numberVBDRONCissCossVGS(th)ID maxPackageStatus
UPDC4G48A8 650 V 80 mOhm 243 pF 26 pF -16 V 20 A Bare die Available
UPDC5G78B1 1200 V 120 mOhm 248 pF 17 pF -14 V 20 A Bare die Available

Understanding the Difference: D-Mode vs E-Mode GaN HEMTs

What is a D-Mode (Depletion-Mode) GaN HEMT

A depletion-mode GaN HEMT is normally on: it conducts at 0 V gate bias and needs a negative gate voltage to turn off. Ultraband's UPDC4G48A8 and UPDC5G78B1 have thresholds of -16 V and -14 V. D-mode devices offer the best intrinsic GaN performance and are often paired with a low-voltage silicon MOSFET in a cascode for normally-off operation.

What is an E-Mode or Cascode GaN Device

An enhancement-mode (E-mode) GaN HEMT is normally off, like a silicon MOSFET, which simplifies gate drive and fail-safe design. A cascode combines a D-mode GaN HEMT with a low-voltage MOSFET to achieve the same normally-off behaviour while keeping GaN's high-voltage, low-loss switching. Ultraband develops both D-mode and cascode structures.

Why Source Ultraband GaN Power HEMTs from Emerges Singapore

Sourcing Ultraband parts from an authorised distributor protects you on traceability, warranty and long-term support. Emerges is an authorised Ultraband Technologies distributor, so every part is genuine Ultraband product backed by full manufacturer support, and we can relay datasheets, samples and custom-design requests directly to Ultraband's engineering team in Taiwan.
For aerospace, defence and infrastructure procurement, certification matters. Emerges holds AS9120B and ISO 9001 certification and is registered as an IAQG aerospace electronics supplier, giving your quality and compliance teams the documentation trail they need. Singapore-based engineers provide technical pre-sales support, from MMIC selection and bare-die handling to phased array integration.
We ship to Singapore, Malaysia, Vietnam, Thailand and the wider Asia-Pacific region, backed by more than 30 years of experience supplying RF and microwave components to demanding sectors.

Related Ultraband and RF Products

Explore the rest of the Ultraband GaN and GaAs range.

Ultraband GaN Power HEMT FAQs

Ultraband currently lists two D-mode GaN-on-SiC HEMTs: the 650 V UPDC4G48A8 (80 mOhm) and the 1200 V UPDC5G78B1 (120 mOhm), both rated at 20 A.

Both released devices are supplied as bare die for standard die-attach in power modules. Contact us about packaging options.

Yes. Both are depletion-mode devices with negative threshold voltages (-16 V and -14 V). Use a negative gate drive or a cascode with a low-voltage MOSFET for normally-off operation.

Power systems, renewable energy inverters, EV charging and on-board chargers, industrial control and aerospace and defence power conversion.

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