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Home » Ultraband UPDC4G48A8 650 V D-Mode GaN Power HEMT
Ultraband GaN power HEMT devices

Ultraband UPDC4G48A8 650 V D-Mode GaN Power HEMT

The Ultraband UPDC4G48A8 is a 650 V depletion-mode (D-mode) GaN-on-SiC power HEMT with 80 mOhm on-resistance and 20 A maximum drain current. Low input and output capacitance (243 pF Ciss, 26 pF Coss) keep switching losses low in high-voltage power conversion. It is supplied as bare die for standard die-attach.

Key Features

  • 650 V breakdown voltage
  • 80 mOhm RON
  • 20 A ID max
  • 243 pF Ciss, 26 pF Coss
  • GaN-on-SiC, depletion mode, bare die

Key Specifications

ProcessGaN-on-SiC, depletion mode
Breakdown voltage (VBD)650 V
On-resistance (RON)80 mOhm
Input capacitance (Ciss)243 pF
Output capacitance (Coss)26 pF
Threshold voltage (VGS(th))-16 V
Max drain current (ID max)20 A
PackageBare die
DatasheetRequest datasheet

Applications

  • Power systems
  • Renewable energy
  • EV charging and on-board chargers
  • Industrial control
  • Aerospace and defence

Part of the Ultraband GaN Power HEMT range. Emerges is an authorised Ultraband Technologies distributor in Singapore. See all Ultraband Technologies products.

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