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Home » Ultraband UPDC5G78B1 1200 V D-Mode GaN Power HEMT
Ultraband GaN power HEMT devices

Ultraband UPDC5G78B1 1200 V D-Mode GaN Power HEMT

The Ultraband UPDC5G78B1 is a 1200 V depletion-mode (D-mode) GaN-on-SiC power HEMT with 120 mOhm on-resistance and 20 A maximum drain current. Its 17 pF output capacitance supports fast, low-loss switching in high-voltage converters, EV chargers and industrial drives. It is supplied as bare die for standard die-attach.

Key Features

  • 1200 V breakdown voltage
  • 120 mOhm RON
  • 20 A ID max
  • 248 pF Ciss, 17 pF Coss
  • GaN-on-SiC, depletion mode, bare die

Key Specifications

ProcessGaN-on-SiC, depletion mode
Breakdown voltage (VBD)1200 V
On-resistance (RON)120 mOhm
Input capacitance (Ciss)248 pF
Output capacitance (Coss)17 pF
Threshold voltage (VGS(th))-14 V
Max drain current (ID max)20 A
PackageBare die
DatasheetRequest datasheet

Applications

  • Power systems
  • Renewable energy
  • EV charging and on-board chargers
  • Industrial control
  • Aerospace and defence

Part of the Ultraband GaN Power HEMT range. Emerges is an authorised Ultraband Technologies distributor in Singapore. See all Ultraband Technologies products.

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