ARF1300Q4 is a distributed amplifier designed for high bandwidth applications. With 13 dB of linear gain and a P1dB of 21.5 dBm, it is well suited for a wide variety of applications.
The circuit draws 130 mA from a 10 V DC supply. The part is internally matched to 50 Ω with ESD protection. RF ports are DC coupled and a bias tee is required on RF OUTPUT. The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
The ARF1003C7 is a two-stage GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier in an air-cavity surface-mount ceramic package and designed for a variety of X-band applications. The operating frequency ranges from 8.5 to 10.5 GHz. The saturated pulsed output power is 42 dBm and the small signal gain is 19 dB. The part is internally matched to 50 Ω. The part can be auto-biased using a –5 V reference voltage, or direct-biased for variable bias control. RF ports are AC coupled.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, dual-use, end-use statement required.
ARF1206L5 is a packaged low-noise amplifier for E-band applications. With 18 dB typical gain and 3 dB noise figure at 71 GHz, it is suitable for a variety of demanding telecommunication and sensing applications. Amplifier stages 1 and 2 are controlled by a single gate bias connection VG12, whereas a separate gate voltage VG3 controls the output stage.
These voltages can be used to control the amplifier gain, to turn the part off, or connected to 0 V for full gain operation. The part is pre-matched to 50 Ω, ESD protected and housed in a laminate package to simplify handling and assembly. The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control. Export from The Netherlands/EU, dual-use, end-use statement required.
The ARF1001C7 is a two stage GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier in an air-cavity surface-mount ceramic package and designed for a variety of X-band applications. The operating frequency ranges from 8 to 11 GHz. The saturated pulsed output power is 37 dBm and the small signal gain is 25 dB. The part is internally matched to 50 Ω. The part can be auto-biased using a –5 V reference voltage, or direct-biased for variable bias control. RF ports are AC coupled.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, dual-use, end-use statement required.
