Ultraband Technologies is a Taiwan-based fabless III-V compound semiconductor design house, founded in 2020 in Zhubei, Hsinchu. Its founding team traces its lineage to the team behind WIN Semiconductors, and the company designs across GaN-on-SiC HEMT, GaAs pHEMT and InP HEMT processes with a focus on high efficiency and high linearity.
Ultraband works end to end, from epitaxial structure and device layout optimisation through IC design and 3D MMIC packaging to antenna-in-module system integration. That breadth runs from compact DFN and QFN Wi-Fi parts to bare-die Ka-band MMICs for 5G FR2 and SATCOM, high-voltage GaN power devices, and complete 16 x 16 antenna-in-module phased array terminals.
Ultraband also accepts custom design requests for MMICs and modules. Talk to Emerges about your requirements and we will coordinate with Ultraband's engineering team.
5 GHz ISM-band LNA for 4.9 to 5.9 GHz Wi-Fi receivers, with sub-1.5 dB noise figure from a 3.3 V supply.
2.4 GHz ISM-band LNA with 13.5 dB gain and NF below 1.2 dB, for Wi-Fi, Bluetooth-band and IoT receivers.
Wideband 0.1 to 6 GHz SPDT switch with insertion loss below 1.1 dB and 55 dBm IIP3.
2.4 GHz Wi-Fi front-end module with 34 dB gain and up to 22.5 dBm linear output power.
5 GHz Wi-Fi front-end module for 5.15 to 5.85 GHz, 28.5 dB gain and up to 22.5 dBm linear output power.
0.5 W class Ku-band PA for 12.5 to 14.7 GHz on a 5 V rail, QFN 3 x 3 mm.
2 W class Ku-band PA for 12.5 to 14.7 GHz on a 5 V rail, QFN 4 x 4 mm.
24 to 30 GHz bare-die PA with 26 dBm output power, 17 dB gain and 30% PAE.
26 to 30 GHz bare-die PA with 30 dBm (1 W) output power and 50% PAE.
24 to 30 GHz bare-die PA with 47% PAE and 32 dBm OIP3.
26 to 28 GHz (n257 / n258) packaged PA in QFN 4 x 4 mm on a 5 V supply.
10.5 to 12.75 GHz Ku-band LNA with NF below 1.2 dB and over 27 dB gain, QFN 3 x 3 mm.
25 to 31 GHz bare-die LNA with over 26.5 dB gain and 2.5 dB NF at 28 GHz.
26 to 28 GHz (n257 / n258) LNA in QFN 3 x 3 mm, NF below 2.2 dB on a 3.5 V supply.
10.5 to 20.5 GHz SPDT switch with insertion loss below 1.2 dB, QFN 3 x 3 mm on 5 V.
Ka-band SPDT switch MMIC with low loss and high linearity. Specifications on request.
Packaged Ka-band SPDT switch in development. Specifications on request.
25 to 31 GHz switch + LNA front-end module on a single bare die, over 17.3 dB gain.
650 V depletion-mode GaN-on-SiC HEMT with 80 mOhm RON and 20 A ID max, bare die.
1200 V depletion-mode GaN-on-SiC HEMT with 120 mOhm RON and 20 A ID max, bare die.
Electronically steered Ku-band flat-panel terminal for LEO satellites, EIRP above 66 dBm, G/T 6 dB/K.
Modular Ku-band phased array built from 16 x 16 AiM tiles, EIRP above 83 dBm, G/T 9 dB/K.
Drone-mountable 3.2 kg Ku-band beam-steering terminal extending UAV links to tens of km for BVLOS flight.
| Part number | Product line | Type | Frequency / Rating | Package / Format | Status |
|---|---|---|---|---|---|
| AN5404 | RF MMIC | Wi-Fi LNA | 4.9 to 5.9 GHz | DFN 1.5 x 1.5 mm | Available |
| AN5405 | RF MMIC | Wi-Fi LNA | 2.4 to 2.5 GHz | DFN 1.5 x 1.5 mm | Available |
| SW470A | RF MMIC | SPDT RF switch | 0.1 to 6 GHz | DFN 1.5 x 1.5 mm | Available |
| FM5337 | RF MMIC | Wi-Fi FEM | 2.4 to 2.5 GHz | QFN 3 x 3 mm | Available |
| FM5755 | RF MMIC | Wi-Fi FEM | 5.15 to 5.85 GHz | QFN 3 x 3 mm | Available |
| Ku-Band PA (0.5 W) | mmWave MMIC | Ku-band PA | 12.5 to 14.7 GHz | QFN 3 x 3 mm | Coming soon |
| Ku-Band PA (2 W) | mmWave MMIC | Ku-band PA | 12.5 to 14.7 GHz | QFN 4 x 4 mm | Coming soon |
| URP5A98 | mmWave MMIC | Ka-band PA | 24 to 30 GHz | Bare die | Available |
| URP5B95 | mmWave MMIC | Ka-band PA | 26 to 30 GHz | Bare die | Available |
| URP5B98 | mmWave MMIC | Ka-band PA | 24 to 30 GHz | Bare die | Available |
| Ka-Band PA (QFN) | mmWave MMIC | Ka-band PA | 26 to 28 GHz | QFN 4 x 4 mm | Coming soon |
| Ku-Band LNA | mmWave MMIC | Ku-band LNA | 10.5 to 12.75 GHz | QFN 3 x 3 mm | Coming soon |
| URL6C48 | mmWave MMIC | Ka-band LNA | 25 to 31 GHz | Bare die | Available |
| Ka-Band LNA (QFN) | mmWave MMIC | Ka-band LNA | 26 to 28 GHz | QFN 3 x 3 mm | Coming soon |
| Ku-Band SPDT Switch | mmWave MMIC | Ku-band switch | 10.5 to 20.5 GHz | QFN 3 x 3 mm | Coming soon |
| URS6C58 | mmWave MMIC | Ka-band switch | Request datasheet | Request datasheet | Available |
| Ka-Band SPDT Switch (QFN) | mmWave MMIC | Ka-band switch | - | - | Coming soon |
| URF6C55 | mmWave MMIC | Ka-band FEM | 25 to 31 GHz | Bare die | Available |
| UPDC4G48A8 | GaN Power HEMT | 650 V D-mode GaN HEMT | 650 V | Bare die | Available |
| UPDC5G78B1 | GaN Power HEMT | 1200 V D-mode GaN HEMT | 1200 V | Bare die | Available |
| Azhdarchidae | SATCOM & Phased Array Systems | Ku-band LEO phased array terminal | 12.75 to 14.5 GHz | 56 x 56 x 11 cm | Available |
| Quetzalcoatlus | SATCOM & Phased Array Systems | Modular Ku-band phased array terminal | 12.75 to 14.5 GHz | Request datasheet | Available |
| AzhdaeQ | SATCOM & Phased Array Systems | UAV Ku-band beam-steering module | 12.75 to 14.5 GHz | 26 x 31 x 7 cm | Available |
Yes. Emerges is an authorised Ultraband Technologies distributor based in Singapore, supplying genuine Ultraband parts with full manufacturer support across Southeast Asia.
Ultraband designs RF MMICs (Wi-Fi LNAs, switches and front-end modules), mmWave MMICs for Ku and Ka-band (PAs, LNAs, switches and FEMs), GaN-on-SiC power HEMTs rated at 650 V and 1200 V, and Ku-band phased array SATCOM terminals and UAV modules.
Ultraband Technologies is headquartered in Zhubei City, Hsinchu County, Taiwan. It was founded in March 2020 as a fabless III-V compound semiconductor IC design house.
Use the Request a Quote button on any Ultraband page, or contact Emerges directly. Many Ultraband datasheets are supplied on request, and we will obtain the latest specifications from Ultraband for you.
Parts marked Coming soon are in development at Ultraband. Contact us to register interest and we will send specifications and sample availability as soon as they are released.
